Title :
A wideband fully integrated SiGe BiCMOS medium power amplifier
Author :
Bae, Hyun-Cheol ; Kim, Sang-Hoon ; Song, Young-Joo ; Lee, Sang-Heung ; Lee, Ja-Yol ; Kang, Jin-Young
Author_Institution :
Dept. of High Speed SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
In this paper, a wideband 3.0 GHz-5.5 GHz medium power amplifier has been designed and fabricated using 0.8 /spl mu/m SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This medium PA is a two stage design with all matching components and bias circuits integrated on-chip. A P1 dB of 16.5 dBm has been measured with a power gain of 8.5 dB at 4.2 GHz with a total current consumption of 130 mA from a 2.5 V supply voltage at 25 /spl deg/C. The measured 3 dB bandwidth is 2.5 GHz, which is a very good result for a fully integrated medium PA. The fabricated circuit occupies a die area of 1.7 mm /spl times/ 0.8 mm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; microwave amplifiers; power amplifiers; resistors; wideband amplifiers; 0.8 mum; 130 mA; 2.5 GHz; 2.5 V; 25 degC; 3.0 to 5.5 GHz; 8.5 dB; MIM capacitor; SiGe; bias circuits integrated on-chip; fully integrated BiCMOS; metal-insulator-metal capacitor; parallel-branch spiral inductor; wideband medium power amplifier; BiCMOS integrated circuits; Broadband amplifiers; Germanium silicon alloys; Inductors; Integrated circuit measurements; Integrated circuit technology; Metal-insulator structures; Power amplifiers; Silicon germanium; Spirals;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
