A 3.5 GHz 2nd harmonic tuned PA design

Author

El Maazouzi, L. ; Colantonio, P. ; Mediavilla, A. ; Giannini, F.

Author_Institution

Dept. of Commun. Eng., Univ. of Cantabria, Santander, Spain

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

1090

Lastpage

1093

Abstract

The efficiency of microwave PAs is limited by the active device parameters and operating conditions. High efficiency can be obtained by a proper selection of bias point and harmonic terminations or, from a different point of view, by a proper output voltage and/or current waveform shaping. This work describes the design of a high efficient 3.5 GHz GaN HEMT power amplifier which may be used in WiMAX applications. The PA is designed by using a 2^nd harmonic tuned (HT) approach and has been realized and measured. Its measured performances confirm the improvement obtained by means of harmonic manipulation over class AB (TL PA). An output power of 35.3 dBm has been measured for the maximum power added efficiency of 57.7%, drains efficiency of 69.18% and measured C/I3 of 19.1 dB.

Keywords

gallium compounds; harmonic generation; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; 2^nd harmonic tuning; GaN; HEMT power amplifier; drains efficiency; efficiency 57.7 percent; efficiency 69.18 percent; frequency 3.5 GHz; microwave PA; power added efficiency; Gallium nitride; HEMTs; High power amplifiers; Microwave devices; Performance evaluation; Power amplifiers; Power generation; Power measurement; Voltage; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5296538