• DocumentCode
    2028292
  • Title

    A microcontroller SRAM-PUF

  • Author

    Böhm, Christoph ; Hofer, Maximilian ; Pribyl, Wolfgang

  • Author_Institution
    Inst. for Electron., Graz Univ. of Technol., Graz, Austria
  • fYear
    2011
  • fDate
    6-8 Sept. 2011
  • Firstpage
    269
  • Lastpage
    273
  • Abstract
    Key storage is a well-known security issue. Usually, keys are generated and then stored in an non-volatile memory (NVM). A promising alternative are the so-called physical unclonable functions (PUFs). These functions extract key material directly from manufacturing variabilities of a device. One example of such a PUF is the SRAM-PUF. It uses the power-up states of SRAM cells to generate an ID/key. In this paper we present an SRAM PUF which we implemented on a microcontroller using the internal SRAM blocks. Combined with a simple error correction code, namely the repetition code, we could reduce the error rates to small values. Using a repetition factor of 31 we reached a probability for one or more errors within a 2048bit key of lower than 7e-7 within a temperature range from 0C to 80C. The low costs and the simplicity of implementation makes the SRAM-PUF on a microcontroller an attractive alternative to common approaches.
  • Keywords
    SRAM chips; error correction codes; microcontrollers; security of data; SRAM cell power-up state; SRAM-PUF microcontroller; error correction code; internal SRAM block; key storage; physical unclonable function; repetition code; repetition factor; static random access memory; temperature 0 degC to 80 degC; Ash; Correlation; Error analysis; Error correction codes; Microcontrollers; Random access memory; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Network and System Security (NSS), 2011 5th International Conference on
  • Conference_Location
    Milan
  • Print_ISBN
    978-1-4577-0458-1
  • Type

    conf

  • DOI
    10.1109/ICNSS.2011.6060013
  • Filename
    6060013