• DocumentCode
    2028690
  • Title

    A low-power ka-band direct conversion receiver employing half-frequency local oscillator in 65nm CMOS

  • Author

    Sosio, M. ; Mazzanti, A. ; Repossi, M. ; Svelto, F.

  • Author_Institution
    Dipt. di Elettron., Univ. di Pavia, Pavia, Italy
  • fYear
    2009
  • fDate
    Sept. 29 2009-Oct. 1 2009
  • Firstpage
    256
  • Lastpage
    259
  • Abstract
    Direct conversion to DC by means of quadrature SubHarmonic mixers is a promising solution to arrive at low power silicon receivers working at millimeter waves. A lower frequency local oscillator (LO) does not compromise receiver performances while takes advantage of the higher quality of tuning elements and avoids high frequency, power-hungry dividers in the synthesizer. This paper summarizes our recent research efforts to arrive at a low power receiver architecture tailored to Ka band operation. The receiver IC, implemented in a 65 nm CMOS technology, displays 31.5 dB gain and 6.7 dB NF. The LO has an outstanding frequency tuning range of 26.5% with -110 dBc/Hz phase noise at 1 MHz offset. Total power dissipation is 78 mW only.
  • Keywords
    CMOS integrated circuits; millimetre wave mixers; millimetre wave receivers; oscillators; CMOS technology; Ka band direct conversion receiver; complementary metal-oxide-semiconductor; frequency tuning; gain 31.5 dB; half-frequency local oscillator; noise figure 6.7 dB; power 78 mW; power dissipation; power silicon receivers; quadrature subharmonic mixers; size 65 nm; CMOS integrated circuits; CMOS technology; Frequency conversion; Frequency synthesizers; Integrated circuit noise; Local oscillators; Millimeter wave technology; Mixers; Silicon; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. EuMC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4748-0
  • Type

    conf

  • Filename
    5296576