DocumentCode
2028803
Title
Modeling nonuniform doping in subthreshold MOSFETs
Author
Meitzler, Richard C. ; Andreou, Andreas G.
Author_Institution
Hewlett-Packard Co., Palo Alto, CA, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
265
Abstract
For subthreshold MOSFETs, there can be large variations in depletion region width relative to above threshold operation. This work investigates the significance of nonuniform doping effects in subthreshold conduction through numerical calculations based on measured dopant profiles. The ultimate goal of the simulations is improving the accuracy of compact MOSFET models for subthreshold circuit simulation. To this end, a semi-empirical expression suitable for inclusion in a public domain MOSFET model [the EPFL model by Enz, Krummenacher, and Vittoz (1995)] is also proposed
Keywords
MOSFET; doping profiles; semiconductor device models; semiconductor doping; EPFL model; compact MOSFET models; depletion region width; dopant profiles; nonuniform doping; numerical calculations; subthreshold MOSFETs; subthreshold circuit simulation; subthreshold conduction; Circuit simulation; Doping profiles; Implants; Intrusion detection; Ion implantation; MOSFETs; Semiconductor process modeling; Shape; Subthreshold current; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.594123
Filename
594123
Link To Document