DocumentCode
2028839
Title
Improved MOSFET model for high frequency analog design
Author
El-Sherif, Alaa Y. ; Ashley, Kenneth L.
Author_Institution
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
269
Abstract
The availability of an accurate MOSFET model has become a real issue for efficient design and simulation of high performance analog and digital VLSI circuits. In this paper an improved non-quasi-static (NQS) MOSFET model is introduced for more accurate response at high frequencies for deep-submicron and narrow devices. The model is valid over a wide range of device dimensions and different operation conditions. The evaluation of the model is based on the determination of the 50-Ω scattering parameters using SPICE
Keywords
MOSFET; S-parameters; VLSI; analogue integrated circuits; equivalent circuits; integrated circuit design; semiconductor device models; MOSFET model; SPICE; VLSI circuits; deep-submicron devices; high frequency analog design; nonquasi-static model; scattering parameters; Availability; Circuit simulation; Degradation; Equivalent circuits; Frequency; MOSFET circuits; SPICE; Scattering parameters; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.594125
Filename
594125
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