Title :
Small signal access paths silicon-BJT de-embedding
Author :
Megherbi, S. ; Crozat, P. ; Raynaud, G. ; Pône, J.F.
Author_Institution :
Inst. d´´Electronique Fondamentale, Paris-Sus Univ., Orsay, France
Abstract :
High frequency small-signal measurements provide information for time-domain device characterisation. Parasitic phenomena associated with probe and interconnect-metal lines surrounding the device, have an impact on measurements during wafer test. The aim of this work was to subtract the small-signal high-frequency access path effects, using an equivalent model in the 45 MHz-10 GHz range. We propose to apply to bipolar silicon technology a de-embedding GaAs-MESFET method for which the effect of access path are considerably lowered and therefore can be neglected. This correction can then be taken into account for each frequency value during a time domain modelisation
Keywords :
S-parameters; elemental semiconductors; equivalent circuits; microwave bipolar transistors; semiconductor device models; semiconductor device testing; silicon; 45 MHz to 10 GHz; HF small-signal measurements; Si; Si BJT de-embedding; equivalent model; small signal access paths; time-domain device characterisation; wafer test; Calibration; Circuit topology; Frequency measurement; Gallium arsenide; Integrated circuit interconnections; Parasitic capacitance; Scattering parameters; Silicon; Testing; Voltage;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594130
