Title :
Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
Author :
McNutt, T.R. ; Hefner, A.R. ; Mantooth, H.A. ; Duliere, J.L. ; Berning, D.W. ; Singh, R.
Author_Institution :
Arkansas Univ., Fayetteville, AR, USA
Abstract :
A detailed parameter extraction sequence for the comprehensive silicon carbide (SiC) power diode model Is presented. The extraction sequence Is applicable to any SiC diode technology. It is demonstrated for a 1.5 kV, 10 A merged PIN Schottky (MIPS); 5 kV, 20 A PiN; 10 kV, 5 A PiN; and the new commercially available 600 V, 1 A and 4 A Schottky diodes.
Keywords :
Schottky diodes; p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon compounds; 1 A; 1.5 kV; 10 A; 10 kV; 20 A; 4 A; 5 A; 5 kV; 600 V; Schottky diodes; SiC; SiC power diode model; merged PIN Schottky; parameter extraction sequence; Circuit simulation; Leakage current; NIST; Parameter extraction; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature dependence; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
Print_ISBN :
0-7803-7262-X
DOI :
10.1109/PSEC.2002.1022351
