Title :
Low temperature characterization and modeling of IGBTs
Author :
Kang, X. ; Caiafa, A. ; Santi, E. ; Hudgins, J. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
The turn-off switching characteristics and breakdown voltage of both punch-through (PT) and non-punchthrough (NPT) 1GBTs are examined over a temperature range of -125 to 100°C. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and good agreement is found.
Keywords :
SPICE; bipolar transistor switches; insulated gate bipolar transistors; semiconductor device models; thermal analysis; 125 to 100 degC; PSpice model; breakdown voltage; computer simulation; nonpunch-through IGBTs; punch-through IGBTs; temperature range; turn-off switching characteristics; Analytical models; Automobiles; Buffer layers; Computational modeling; Equations; Insulated gate bipolar transistors; Power supplies; Substrates; Temperature distribution; Transportation;
Conference_Titel :
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
Print_ISBN :
0-7803-7262-X
DOI :
10.1109/PSEC.2002.1022352
