Title :
Parameter extraction for physics-based IGBT models by electrical measurements
Author :
Claudio, A. ; Cotorogea, M. ; Rodríguez, M.A.
Author_Institution :
Centro Nacional de Investigacion y Desarrollo Tecnologico, Morelos, Mexico
Abstract :
The IGBT (insulated gate bipolar transistor) is becoming the power switch of choice for many power applications, since it offers a good compromise between on-state loss, switching loss, and ease of use. To develop circuits and systems using these devices, models are needed for use in circuit simulators. This paper presents a procedure for extracting the most important parameters to be used in IGBT models with physical background by electrical measurements. The parameter extraction consists of 6 test circuits and 6 algorithms that extract 13 physical and structural parameters needed in most physics-based IGBT models.
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; circuit simulators; electrical measurements; insulated gate bipolar transistor; on-state loss; parameter extraction; physics-based IGBT models; power applications; power switch; switching loss; Buffer layers; Circuit simulation; Circuit testing; Electric variables measurement; Insulated gate bipolar transistors; Insulation; Parameter extraction; Power system modeling; Switching circuits; Switching loss;
Conference_Titel :
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
Print_ISBN :
0-7803-7262-X
DOI :
10.1109/PSEC.2002.1022355
