Parameter extraction for physics-based IGBT models by electrical measurements

The IGBT (insulated gate bipolar transistor) is becoming the power switch of choice for many power applications, since it offers a good compromise between on-state loss, switching loss, and ease of use. To develop circuits and systems using these devices, models are needed for use in circuit simulators. This paper presents a procedure for extracting the most important parameters to be used in IGBT models with physical background by electrical measurements. The parameter extraction consists of 6 test circuits and 6 algorithms that extract 13 physical and structural parameters needed in most physics-based IGBT models.