An improved lumped-charge model and parameter extraction approach of PIN diodes

An improved lumped-charge model of PIN diodes is described. This model includes reverse and forward recovery, emitter recombination and boundary-moving effects. Especially for reverse recovery, both sweeping out and recombination effects are taken into account Based on the model, most parameters can be extracted by a new accurate curve-fitting approach, and the other can be obtained by simple experiments. Comparison between simulation and experimental results for transient behavior verifies the model and the parameter extraction approach.