DocumentCode :
2029988
Title :
Multifunction monolithic GaAs pin-diode core chip for x-band aesa T/R modules
Author :
Yushchenko, A.Yu. ; Ayzenshtat, G.I. ; Monastyrev, E.A. ; Bozhkov, V.G. ; Ivashenko, A.I. ; Bezruk, A.V.
Author_Institution :
Res. Inst. of Semicond. Devices, Tomsk, Russia
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
72
Lastpage :
73
Abstract :
The creating possibility of monolithic GaAs pin-diode core chip is shown. The results of development of X-band monolithic GaAs pin-diode core chip including 5 bit attenuator, 6 bit true time delay and SPDT switch are presented.
Keywords :
III-V semiconductors; gallium arsenide; microwave diodes; p-i-n diodes; GaAs; SPDT switch; X-band AESA T/R modules; attenuator; multifunction monolithic GaAs pin-diode core chip; time delay; word length 5 bit; word length 6 bit; Attenuators; Delay effects; Electronic mail; Gallium arsenide; MMICs; Microwave antennas; Phase shifters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6652613
Link To Document :
بازگشت