Title :
0–4 GHz GaAs MMIC SPST switch
Author :
Povorozhenko, P.A. ; Sova, E.M. ; Lee, A.I. ; Tolstolutsky, S.I.
Author_Institution :
Res. Inst. of Radiocommun., Rostov-on-Don, Russia
Abstract :
In this paper, results of designing microwave monolithic integrated circuit of broadband SPST with chip dimensions of 1.35×0.75×0.1 mm3 and providing 1.0 dB conversion loss and 48 dB isolation in 0-4.0 GHz range are represented.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave switches; semiconductor switches; GaAs; GaAs MMIC SPST SWITCH; broadband SPST; chip dimensions; conversion loss; frequency 0 GHz to 4 GHz; isolation; microwave monolithic integrated circuit; Abstracts; Gallium arsenide; MMICs; Microwave FET integrated circuits; Region 8; Switches;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
