3-D electromagnetic field analysis of interconnections in copper-polyimide multichip modules

Author

Sasaki, Shinichi ; Konno, Riyo ; Tomimuro, Hisashi ; Ohsaki, Takaaki

Author_Institution

NTT Appl. Electron. Lab., Tokyo, Japan

fYear

1991

fDate

11-16 May 1991

Firstpage

70

Lastpage

76

Abstract

The authors describe three-dimensional electromagnetic field analysis of interconnections in copper-polyimide multichip modules. This analysis is based on the spatial network method, a lattice network model of Maxwell´s equation formulated in the time domain by Bergeron´s method. Results of simulating reflection and transmission waves at interconnections are presented. Frequency characteristics of the scattering parameter S₂₁ are calculated using the fast Fourier transform. The 3-dB down cutoff frequencies of wire-bonded, TAB (tape automated bonding), and FCB (flip-chip bonding) interconnections are respectively 6, 14, and 40 GHz. Those of the interconnection vias are over 200 GHz

Keywords

flip-chip devices; hybrid integrated circuits; lead bonding; microwave integrated circuits; tape automated bonding; 3D analysis; 6 to 200 GHz; Bergeron´s method; FCB; Maxwell´s equation; S₂₁; TAB; cutoff frequencies; electromagnetic field analysis; fast Fourier transform; flip-chip bonding; interconnection vias; interconnections; lattice network model; multichip modules; reflection waves; scattering parameter; spatial network method; tape automated bonding; transmission waves; wire bonded connections; Bonding; Electromagnetic analysis; Electromagnetic fields; Electromagnetic reflection; Frequency; Lattices; Maxwell equations; Multichip modules; Scattering parameters; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1991. Proceedings., 41st

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-0012-2

Type

conf

DOI

10.1109/ECTC.1991.163856

Filename

163856