Title :
GaN HEMT with 0.5-µm gate length and gate width of 500 µm and 1500 µm
Author :
Vyuginov, V.N. ; Volkov, V.V. ; Zybin, A.A.
Author_Institution :
JSC Svetlana-Electronpribor, St. Petersburg, Russia
Abstract :
Design and fabrication process of 0.5-μm GaN HEMT with 500-μm and 1500-μm gate width are described. Results of the S-parameter measurements are presented and compared with the data of TGF2023-01 transistors fabricated by TriQuint Semiconductor.
Keywords :
III-V semiconductors; S-parameters; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; S-parameter measurements; design; fabrication process; gate length; gate width; size 1500 mum; size 500 mum; Electronic mail; Gallium nitride; HEMTs; Logic gates; Microwave transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
