DocumentCode
2030266
Title
High efficiency L-, S-, C- band GaN power pulse amplifiers
Author
Sukhanov, D.A. ; Kishchinskiy, A.A.
Author_Institution
Microwave Syst. JSC, Moscow, Russia
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
94
Lastpage
95
Abstract
The results of the development and experimental investigation of a L-, S- and C-band GaN transistor amplifiers with output pulse power from 68 to 200 Watt and minimum PAE 40-55% for AESA radar systems are presented. The experimental characteristics, design features and assembly technology of the amplifier are discussed.
Keywords
III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; microwave power amplifiers; microwave transistors; millimetre wave power amplifiers; millimetre wave transistors; wide band gap semiconductors; AESA radar systems; C-band power pulse amplifiers; GaN; S-band power pulse amplifiers; high efficiency L-band power pulse amplifiers; power 68 W to 200 W; transistor amplifiers; Electronic mail; Gallium nitride; HEMTs; L-band; Microwave amplifiers; Microwave transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652624
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