Title :
A 2–8 GHz ultrawideband 14 W power amplifier
Author :
Markinov, E.G. ; Radchenko, A.V.
Author_Institution :
Microwave Syst. JSC, Moscow, Russia
Abstract :
The results of the development and experimental investigation of 2-8 GHz range broadband GaN transistor amplifier with CW output power of 14-21 Watt and PAE 25-30% (to be used as a transmitting module of broad-band multibeam arrays) are presented. The experimental characteristics, design features and assembly technology of the amplifier are discussed.
Keywords :
III-V semiconductors; UHF power amplifiers; microwave power amplifiers; microwave power transistors; wide band gap semiconductors; wideband amplifiers; PAE; broadband GaN transistor amplifier; frequency 2 GHz to 8 GHz; power 14 W to 21 W; ultra wideband power amplifier; Broadband communication; Electronic mail; Gallium arsenide; Gallium nitride; HEMTs; Microwave amplifiers; Power amplifiers;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
