Next generation narrowband RF front-ends in silicon IC technology

Author

Long, John R.

Author_Institution

Toronto Univ., Ont., Canada

fYear

1998

fDate

19-21 Feb 1998

Firstpage

275

Lastpage

280

Abstract

It is anticipated that the next generation of wireless systems will deliver voice and data services at carrier frequencies extending up to 6 GHz. The front-end circuits for these radios must be aggressively designed in order to deal with issues such as analog and digital compatibility, higher linearity imposed by broadband signal processing at IF, low supply voltage to minimize size, weight and power consumption, as well as operation in multiple frequency bands. The challenges and opportunities facing the designer of these radio frequency (RF) front-end IC´s in silicon will be addressed in this paper from both the technological and circuit perspectives

Keywords

analogue integrated circuits; data communication; elemental semiconductors; mobile communication; silicon; transceivers; voice communication; 1 to 6 GHz; IC technology; Si; analog compatibility; broadband signal processing; carrier frequencies; data services; digital compatibility; linearity; multiple frequency bands; next generation narrowband RF front-ends; power consumption; supply voltage; transceivers; voice services; wireless systems; Digital signal processing; Energy consumption; Integrated circuit technology; Linearity; Low voltage; Narrowband; Radio frequency; Radiofrequency integrated circuits; Signal design; Silicon; Switches; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 1998. Proceedings of the 8th Great Lakes Symposium on

Conference_Location

Lafayette, LA

ISSN

1066-1395

Print_ISBN

0-8186-8409-7

Type

conf

DOI

10.1109/GLSV.1998.665264

Filename

665264