Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique

Author

Horstmann, J.T. ; Hilleringmann, U. ; Goser, K.

Author_Institution

Fac. of Electr. Eng., Dortmund Univ., Germany

Volume

3

fYear

2000

fDate

2000

Firstpage

1867

Abstract

The flicker noise (also called 1/f-noise) of NMOS-transistors with a channel length down to 80 nm is analyzed in comparison to the 1/f-noise of standard transistors with identical doping and gate oxide thickness by a large number of measurements. It is shown that the noise of sub-100 nm-MOS-transistors increases very strongly in comparison to standard transistors with a channel length in the micrometer region, but that the principal behavior of this noise phenomenon does not differ significantly from known models

Keywords

1/f noise; MOSFET; chemical vapour deposition; dielectric thin films; doping profiles; etching; flicker noise; nanotechnology; oxidation; semiconductor device measurement; semiconductor device models; semiconductor device noise; 1/f-noise; 100 nm; MOS transistors; NMOS transistors; channel length; deposition/etchback technique; doping; flicker noise; gate oxide thickness; models; noise analysis; noise phenomenon; 1f noise; Circuit noise; Current measurement; Density measurement; Etching; Frequency; Low-frequency noise; Noise measurement; Signal to noise ratio; White noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 2000. IECON 2000. 26th Annual Confjerence of the IEEE

Conference_Location

Nagoya

Print_ISBN

0-7803-6456-2

Type

conf

DOI

10.1109/IECON.2000.972560

Filename

972560