Laterally resolved doping by focused ion beam implantation

Author

Reuter, D. ; Meier, C. ; Alvarez, A. Serrano ; Koch, J. ; Wieck, A.D.

Author_Institution

Fac. of Phys. & Astron., Ruhr-Univ., Bochum, Germany

Volume

3

fYear

2000

fDate

2000

Firstpage

1878

Abstract

Maskless focussed ion beam implantation is proposed as an attractive option for the fabrication of electronic devices in the sub 100 nm range. As a step towards this goal we have demonstrated laterally resolved p- and n-type doping in GaAs by implantation of Be⁺ and Si⁺, respectively. By Si⁺-implantation into an Al_xGa_1-xAs/GaAs-heterostructure it was possible to create a laterally structured two dimensional electron gas

Keywords

beryllium; focused ion beam technology; gallium arsenide; ion implantation; nanotechnology; semiconductor doping; silicon; two-dimensional electron gas; AlGaAs-GaAs; Be⁺ implantation; GaAs; GaAs:Be; GaAs:Si; Si⁺ implantation; electrically active impurities; fabrication; laterally resolved n-type doping; laterally resolved p-type doping; laterally structured TDEG; maskless FIB implantation; maskless focused ion beam implantation; semiconductors; two dimensional electron gas; Annealing; Conducting materials; Degradation; Gallium arsenide; Ion beams; Molecular beam epitaxial growth; Physics; Semiconductor device doping; Semiconductor materials; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 2000. IECON 2000. 26th Annual Confjerence of the IEEE

Conference_Location

Nagoya

Print_ISBN

0-7803-6456-2

Type

conf

DOI

10.1109/IECON.2000.972562

Filename

972562