Title :
CVD assisted fabrication of graphene layers for field effect device fabrication
Author :
Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Darmstadt Univ. of Technol., Darmstadt, Germany
Abstract :
In this paper, we report on the fabrication and characterization of graphene layers for graphene field effect devices. After the graphene layers are fabricated by means of chemical vapor deposition using a methane feedstock, the band gap is engineered confining the lateral dimensions of graphene in order to obtain graphene nanoribbons. Contacting the graphene nanoribbons with appropriate metallic materials will lead to field effect devices suitable for various applications.
Keywords :
chemical vapour deposition; field effect devices; graphene; CVD assisted fabrication; band gap; chemical vapor deposition; field effect device fabrication; graphene layers; graphene nanoribbons; metallic materials; methane feedstock; CNTFETs; Fabrication; Lithography; Logic gates; Nickel; Scanning electron microscopy; Catalyst; Chemical vapour deposition; Graphene;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2011 6th International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-61284-899-0
DOI :
10.1109/DTIS.2011.5941438
