DocumentCode
2031055
Title
Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates
Author
Sun, Jie ; Lindvall, Niclas ; Cole, Matthew T. ; Teo, Kenneth B.K. ; Yurgens, August
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2012
fDate
5-8 March 2012
Firstpage
11
Lastpage
14
Abstract
Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ~1000 °C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ~10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.
Keywords
chemical vapour deposition; electrical conductivity; graphene; nanofabrication; nanostructured materials; transparency; C; SiO2-Si; arbitrary high-temperature insulating substrates; chemical vapor deposition; conductivity; nanocrystalline graphene; transparency; Carbon; Dielectrics; Epitaxial growth; Lead; Measurement by laser beam; Silicon; Graphene; chemical vapor deposition; insulator; nanoelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location
Kyoto
Print_ISBN
978-1-4673-1122-9
Type
conf
DOI
10.1109/NEMS.2012.6196711
Filename
6196711
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