• DocumentCode
    2031055
  • Title

    Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

  • Author

    Sun, Jie ; Lindvall, Niclas ; Cole, Matthew T. ; Teo, Kenneth B.K. ; Yurgens, August

  • Author_Institution
    Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
  • fYear
    2012
  • fDate
    5-8 March 2012
  • Firstpage
    11
  • Lastpage
    14
  • Abstract
    Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ~1000 °C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ~10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.
  • Keywords
    chemical vapour deposition; electrical conductivity; graphene; nanofabrication; nanostructured materials; transparency; C; SiO2-Si; arbitrary high-temperature insulating substrates; chemical vapor deposition; conductivity; nanocrystalline graphene; transparency; Carbon; Dielectrics; Epitaxial growth; Lead; Measurement by laser beam; Silicon; Graphene; chemical vapor deposition; insulator; nanoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-1122-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2012.6196711
  • Filename
    6196711