Title :
Characterization of strain fields in graphene films
Author :
Dewanto, Raden ; Dale, Carl ; Hu, Zhongxu ; Keegan, Neil ; Gallacher, Barry ; Hedley, John
Author_Institution :
Newcastle Univ., Newcastle upon Tyne, UK
Abstract :
This paper reports on the Raman shifts corresponding to strain induced in graphene films. A direct correlation is demonstrated between the shifts in the D, G and 2D peaks of graphene compared to the characteristic 521cm-1 peak of the underlying silicon substrate. The approach is shown to be suitable for characterizing the graphene Raman spectrum under load conditions.
Keywords :
Raman spectra; deformation; graphene; thin films; C; Raman shifts; Raman spectrum; graphene films; strain fields; Carbon nanotubes; Copper; Epitaxial growth; Imaging; Laboratories; Performance evaluation; Silicon; Raman spectroscopy; strained graphene;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
DOI :
10.1109/NEMS.2012.6196712
