Title :
Photovoltaic response of N-doped graphene-based photodetector
Author :
Wang, Wenrong ; Li, Tie ; Wang, Yuelin
Author_Institution :
State Key Labs. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
In this paper, photovoltaic response has been found in an N-doped graphene based photodetector with metal-graphene-metal structure. Raman and XPS spectra indicate that nitrogen atoms are doped into the graphene after synthesized in a CVD system by introducing CH4 and NH3. With the semiconducting behavior of I-V curves, N-doping graphene exhibits an opened band-gap, which generates photocurrent under light excitation.
Keywords :
Raman spectra; X-ray photoelectron spectra; chemical vapour deposition; graphene; infrared detectors; metal-semiconductor-metal structures; nitrogen; photoconductivity; photodetectors; photoemission; semiconductor doping; semiconductor growth; C:N; CVD system; I-V curves; N-doped graphene-based photodetector; Raman spectra; XPS spectra; light excitation; metal-graphene-metal structure; nitrogen atoms; opened band-gap; photocurrent; photovoltaic response; semiconducting behavior; Argon; Detectors; Erbium; Lighting; Temperature measurement; Valves; Voltage measurement; CVD; N-doped; graphene; photovoltaic;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
DOI :
10.1109/NEMS.2012.6196714
