Photovoltaic response of N-doped graphene-based photodetector

Author

Wang, Wenrong ; Li, Tie ; Wang, Yuelin

Author_Institution

State Key Labs. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

fYear

2012

fDate

5-8 March 2012

Firstpage

23

Lastpage

26

Abstract

In this paper, photovoltaic response has been found in an N-doped graphene based photodetector with metal-graphene-metal structure. Raman and XPS spectra indicate that nitrogen atoms are doped into the graphene after synthesized in a CVD system by introducing CH₄ and NH₃. With the semiconducting behavior of I-V curves, N-doping graphene exhibits an opened band-gap, which generates photocurrent under light excitation.

Keywords

Raman spectra; X-ray photoelectron spectra; chemical vapour deposition; graphene; infrared detectors; metal-semiconductor-metal structures; nitrogen; photoconductivity; photodetectors; photoemission; semiconductor doping; semiconductor growth; C:N; CVD system; I-V curves; N-doped graphene-based photodetector; Raman spectra; XPS spectra; light excitation; metal-graphene-metal structure; nitrogen atoms; opened band-gap; photocurrent; photovoltaic response; semiconducting behavior; Argon; Detectors; Erbium; Lighting; Temperature measurement; Valves; Voltage measurement; CVD; N-doped; graphene; photovoltaic;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-1122-9

Type

conf

DOI

10.1109/NEMS.2012.6196714

Filename

6196714