Title :
Cryogenic operation of sub-30 nm nMOSFETs: impact of device architecture
Author :
Bertrand, G. ; Deleonibus, S. ; Souil, D. ; Previtali, B. ; Caillat, C. ; Guegan, G. ; Sanquer, Marc ; Balestra, F.
Author_Institution :
Institut de Microelectronique
Keywords :
Ballistic transport; Cryogenics; Degradation; Doping; Implants; MOSFETs; Temperature dependence; Temperature distribution; Threshold voltage; Transconductance;
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
Print_ISBN :
2-86883-606-2
DOI :
10.1109/WOLTE.2002.1022448