• DocumentCode
    2031298
  • Title

    A facile nanowire fabrication approach based on edge lithography

  • Author

    Liu, Yaoping ; Wang, Wei ; Zhang, Haixia Alice ; Wu, Wengang ; Li, Zhihong

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2012
  • fDate
    5-8 March 2012
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    This paper developed a facile nanofabrication approach at a 4-inch wafer level based on edge lithography defined hundreds nanometer-sized features. Aluminum nanowires with width around 600 nm were prepared and the wafer-level width non-uniformity was less than 8.45%. The aluminum nanowires functioned as masks in the deep reaction ion etching for vertically-stacked silicon nanowires and silicon nanoridge preparation. The obtained nanoridges acted as the nano-master in the molding of a PDMS micro/nano integrated channels. The proposed approach has the potential of nanofabricating with mass-production at effective cost, thereby holds promising future in MEMS (Microelectromechanical system) compatible micro/nano integration and nanobiotechnology applications.
  • Keywords
    micromechanical devices; nanolithography; nanowires; narrow band gap semiconductors; MEMS; PDMS micro/nano integrated channel; aluminum nanowires; compatible micro/nano integration; deep reaction ion etching; edge lithography; facile nanowire fabrication; mass-production; microelectromechanical system; nanobiotechnology application; nanometer-sized feature; silicon nanoridge preparation; vertically-stacked silicon nanowires; wafer-level width nonuniformity; Aluminum; Etching; Lithography; Nanoelectromechanical systems; Passivation; Silicon; TV; edge lithography; nanofabrication; nanoridge; nanowires; wafer-level;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-1122-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2012.6196720
  • Filename
    6196720