DocumentCode

2031433

Title

Si nano-devices using an electron-hole system

Author

Fujiwara, A. ; Takahashi, Y.

Author_Institution

NTT Basic Research Laboratories, NTT Corporation

fYear

2002

fDate

2002

Firstpage

85

Lastpage

92

Keywords

Charge carrier processes; Charge coupled devices; Electrons; Energy consumption; FETs; Laboratories; MOSFETs; Radiative recombination; Spontaneous emission; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on

ISSN

1155-4339

Print_ISBN

2-86883-606-2

Type

conf

DOI

10.1109/WOLTE.2002.1022456

Filename

1022456