• DocumentCode
    2031490
  • Title

    Transient and steady state lateral charge transport in polymeric semiconductors

  • Author

    Tiwari, Abhay K. ; Vidhyadhiraja, N.S.

  • Author_Institution
    Chem. & Phys. of Mater. Unit, Jawaharlal Nehru Centre for Adv. Sci. Res., Bangalore, India
  • fYear
    2009
  • fDate
    14-17 Sept. 2009
  • Firstpage
    17
  • Lastpage
    18
  • Abstract
    This paper presents a discrete circuit model with spreading impedance approach for investigation of charge carrier dynamics in polymeric photovoltaic devices covering temperature dependence, frequency response, wavelength dependence and transient response of the devices. The model has been employed on a position sensing device. In an earlier work, this model has been found in good agreement with the experimental results within the consideration of steady state nature of the charge carriers. Now the model has been extended by incorporating the transient nature of the charge flow produced by majority charge carriers generated in the illuminated region considering Gaussian distribution for intensity of laser beam in the illuminated region unlike the previous model where it was assumed to be uniform.
  • Keywords
    optical polymers; optoelectronic devices; organic semiconductors; photovoltaic effects; Gaussian distribuation; charge carrier dynamics; charge carriers; charge flow; discrete circuit model; frequency response; laser beam; polymeric photovoltaic devices; polymeric semiconductors; position sensing device; spreading impedance approach; steady state lateral charge transport; temperature dependence; transient device response; transient lateral charge transport; wavelength dependence; Charge carriers; Circuits; Frequency response; Impedance; Photovoltaic systems; Polymers; Solar power generation; Steady-state; Temperature dependence; Transient response;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
  • Conference_Location
    Gwangju
  • Print_ISBN
    978-1-4244-4180-8
  • Type

    conf

  • DOI
    10.1109/NUSOD.2009.5297189
  • Filename
    5297189