DocumentCode :
2031509
Title :
Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films
Author :
Komiya, K. ; Omura, Y. ; Oka, T. ; Nagahara, M.
Author_Institution :
Kansai University
fYear :
2002
fDate :
2002
Firstpage :
103
Lastpage :
106
Keywords :
Conductive films; Current density; Electric breakdown; Fluctuations; Leakage current; MOS capacitors; Permittivity; Scattering; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
ISSN :
1155-4339
Print_ISBN :
2-86883-606-2
Type :
conf
DOI :
10.1109/WOLTE.2002.1022459
Filename :
1022459
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2031509
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