DocumentCode

2031570

Title

A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K

Author

Lucas, T. ; Jin, Y.

Author_Institution

LPN, CNRS

fYear

2002

fDate

2002

Firstpage

113

Lastpage

116

Keywords

Cryogenics; Electrons; FETs; Intrusion detection; Low-frequency noise; Noise measurement; PHEMTs; Signal to noise ratio; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on

ISSN

1155-4339

Print_ISBN

2-86883-606-2

Type

conf

DOI

10.1109/WOLTE.2002.1022461

Filename

1022461