DocumentCode :
2031570
Title :
A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K
Author :
Lucas, T. ; Jin, Y.
Author_Institution :
LPN, CNRS
fYear :
2002
fDate :
2002
Firstpage :
113
Lastpage :
116
Keywords :
Cryogenics; Electrons; FETs; Intrusion detection; Low-frequency noise; Noise measurement; PHEMTs; Signal to noise ratio; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
ISSN :
1155-4339
Print_ISBN :
2-86883-606-2
Type :
conf
DOI :
10.1109/WOLTE.2002.1022461
Filename :
1022461
Link To Document :
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