DocumentCode

2031602

Title

Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 K

Author

Lucas, Lucas T. ; Jin, Jin Y.

Author_Institution

LPN, MRS

fYear

2002

fDate

2002

Firstpage

121

Lastpage

124

Keywords

Capacitance; Cryogenics; Gallium arsenide; HEMTs; Leakage current; Low-frequency noise; MODFETs; PHEMTs; Power supplies; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on

ISSN

1155-4339

Print_ISBN

2-86883-606-2

Type

conf

DOI

10.1109/WOLTE.2002.1022463

Filename

1022463