DocumentCode
2031747
Title
3-dimensional current flow analysis in InGaN light emitting diodes grown on sapphire substrate
Author
Shim, Jong-In
Author_Institution
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan, South Korea
fYear
2009
fDate
14-17 Sept. 2009
Firstpage
111
Lastpage
112
Abstract
In order to analyze current spreading 3-dimensionally in an InGaN/GaN multiple quantum well (MQW) light emitting diode (LED), we successfully developed a method of modeling a LED as an electrical circuit consisting of resistances and intrinsic diodes. The main advantage of this method is its simple algorithm and fast calculation time.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; semiconductor quantum wells; wide band gap semiconductors; 3-dimensional current flow analysis; InGaN-GaN; LED; electrical circuit; intrinsic diodes; multiple quantum well light emitting diode; resistances; sapphire substrate; Circuit analysis computing; Degradation; Electrical resistance measurement; Electrodes; Gallium nitride; Insulation; Light emitting diodes; Proximity effect; Quantum computing; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location
Gwangju
Print_ISBN
978-1-4244-4180-8
Type
conf
DOI
10.1109/NUSOD.2009.5297198
Filename
5297198
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