Title :
3-dimensional current flow analysis in InGaN light emitting diodes grown on sapphire substrate
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan, South Korea
Abstract :
In order to analyze current spreading 3-dimensionally in an InGaN/GaN multiple quantum well (MQW) light emitting diode (LED), we successfully developed a method of modeling a LED as an electrical circuit consisting of resistances and intrinsic diodes. The main advantage of this method is its simple algorithm and fast calculation time.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; semiconductor quantum wells; wide band gap semiconductors; 3-dimensional current flow analysis; InGaN-GaN; LED; electrical circuit; intrinsic diodes; multiple quantum well light emitting diode; resistances; sapphire substrate; Circuit analysis computing; Degradation; Electrical resistance measurement; Electrodes; Gallium nitride; Insulation; Light emitting diodes; Proximity effect; Quantum computing; Quantum well devices;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297198
