DocumentCode :
2031873
Title :
Learning with memristive devices: How should we model their behavior?
Author :
Querlioz, Damien ; Dollfus, Philippe ; Bichler, Olivier ; Gamrat, Christian
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
fYear :
2011
fDate :
8-9 June 2011
Firstpage :
150
Lastpage :
156
Abstract :
This work discusses the modeling of memristive devices, for architectures where they are used as synapses. It is shown that the most common models used in this context do not always accurately reflect the actual behavior of popular devices in pulse regime. We introduce a new behavioral model, intended towards the nanoarchitecture community. It fits the conductance evolution of Univ. Michigan´s synaptic memristive devices. A variation of the model fits HP labs´s memristors´ behavior in the same conditions. Finally, we discuss using a simple example the importance of this type of modeling for learning architectures and how it can impact the behavior of the learning.
Keywords :
memristors; semiconductor device models; HP labs; Michigan University; memristors; nanoarchitecture community; synapses; synaptic memristive devices; Computational modeling; Computer architecture; Electrical resistance measurement; Mathematical model; Memristors; Nanoscale devices; Resistance; formatting; insert; style; styling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0993-7
Type :
conf
DOI :
10.1109/NANOARCH.2011.5941497
Filename :
5941497
Link To Document :
بازگشت