• DocumentCode
    2031981
  • Title

    Thermal analysis of high-performance mid-infrared quantum cascade lasers

  • Author

    Lee, H.K. ; Yu, J.S.

  • Author_Institution
    Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea
  • fYear
    2009
  • fDate
    14-17 Sept. 2009
  • Firstpage
    9
  • Lastpage
    10
  • Abstract
    We investigated theoretically the thermal characteristics of quantum cascade lasers (QCLs) based on InGaAs/AlInAs/InP materials operating at lambda ~ 4.6 mum. By using a steady-state two dimensional (2D) heat dissipation model, the maximum internal temperature, heat flow pattern, and thermal conductance were obtained for the different device geometries with epilayer-up and down bonding scheme. As the heatsink temperature increases, the maximum internal temperature increases. For 10 mum times 4 mm epilayer-down bonded laser with diamond submount and InP waveguide, a high thermal conductance of Gth = 619.7 W/K-cm2 at room temperature was obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; cooling; gallium arsenide; heat conduction; indium compounds; quantum cascade lasers; InGaAs-AlInAs-InP; heat flow pattern; heatsink temperature; high-performance mid-infrared quantum cascade lasers; maximum internal temperature; steady-state two dimensional heat dissipation model; thermal analysis; thermal conductance; waveguide; Bonding; Conducting materials; Indium gallium arsenide; Indium phosphide; Optical materials; Quantum cascade lasers; Quantum mechanics; Steady-state; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
  • Conference_Location
    Gwangju
  • Print_ISBN
    978-1-4244-4180-8
  • Type

    conf

  • DOI
    10.1109/NUSOD.2009.5297207
  • Filename
    5297207