Title :
Advanced Process Monitoring and Control Methods for Poly Gate CD Targeting
Author :
Underwood, J. ; Gray, J. ; Shepherd, N. ; Caldwell, M. ; Neel, M. ; Darlington, B.
Author_Institution :
Freescale Semicond., Inc., Austin, TX
Abstract :
Accurate poly critical dimension (CD) control is necessary to run speed-sensitive parts in high volume production. A source-of-variation study indicated that poly CD variation accounted for over 50% of end-of-line variation in speed and power for a critical production part. A team was established to implement process control methodologies to reduce poly CD variation. The team took a module-based approach - linking outputs from the lithography, etch, and implant areas to form the tightest possible control for optimal product performance
Keywords :
lithography; process control; process monitoring; semiconductor device manufacture; end-of-line variation; poly critical dimension control; poly gate CD targeting; process control; process monitoring; Design optimization; Etching; Joining processes; Lithography; Manufacturing processes; Microprocessors; Monitoring; Process control; Production; Semiconductor device manufacture;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location :
Boston, MA
Print_ISBN :
1-4244-0254-9
DOI :
10.1109/ASMC.2006.1638718
