DocumentCode :
2032225
Title :
Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode
Author :
Cao, Z.X. ; Hu, W.D. ; Chen, X.S. ; Lu, W. ; Wang, L. ; Li, X.Y.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
fYear :
2009
fDate :
14-17 Sept. 2009
Firstpage :
81
Lastpage :
82
Abstract :
We report on 2D simulations of dark current for GaN/GaN/Al0.33Ga0.67N p-i-n photodiode. The simulated result is in good agreement with experiment data indicating that avalanche multiplication is the cause of breakdown and band-to-band tunneling is the main source of dark current before breakdown. Effects of interface charge on avalanche current are investigated in detail.
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; dark conductivity; gallium compounds; p-i-n photodiodes; tunnelling; GaN-GaN-Al0.33Ga0.67N; avalanche current; avalanche multiplication; band-to-band tunneling; breakdown; dark current simulation; interface charge; p-i-n avalanche photodiode; Aluminum gallium nitride; Avalanche breakdown; Avalanche photodiodes; Dark current; Gallium nitride; Impact ionization; PIN photodiodes; Physics; Substrates; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
Type :
conf
DOI :
10.1109/NUSOD.2009.5297215
Filename :
5297215
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2032225
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