• DocumentCode
    2032225
  • Title

    Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode

  • Author

    Cao, Z.X. ; Hu, W.D. ; Chen, X.S. ; Lu, W. ; Wang, L. ; Li, X.Y.

  • Author_Institution
    Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2009
  • fDate
    14-17 Sept. 2009
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    We report on 2D simulations of dark current for GaN/GaN/Al0.33Ga0.67N p-i-n photodiode. The simulated result is in good agreement with experiment data indicating that avalanche multiplication is the cause of breakdown and band-to-band tunneling is the main source of dark current before breakdown. Effects of interface charge on avalanche current are investigated in detail.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; dark conductivity; gallium compounds; p-i-n photodiodes; tunnelling; GaN-GaN-Al0.33Ga0.67N; avalanche current; avalanche multiplication; band-to-band tunneling; breakdown; dark current simulation; interface charge; p-i-n avalanche photodiode; Aluminum gallium nitride; Avalanche breakdown; Avalanche photodiodes; Dark current; Gallium nitride; Impact ionization; PIN photodiodes; Physics; Substrates; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
  • Conference_Location
    Gwangju
  • Print_ISBN
    978-1-4244-4180-8
  • Type

    conf

  • DOI
    10.1109/NUSOD.2009.5297215
  • Filename
    5297215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2032225