DocumentCode :
2032383
Title :
Pattern Based Prediction for Plasma Etch
Author :
Abrokwah, Kwaku O. ; Chidambaram, P.R. ; Boning, Duane S.
Author_Institution :
Microsystems Tech. Labs., MIT, Cambridge, MA
fYear :
2006
fDate :
22-24 May 2006
Firstpage :
77
Lastpage :
82
Abstract :
Plasma etching is a key process for pattern formation in integrated circuit (IC) manufacturing. Unfortunately, pattern dependent non-uniformities arise in plasma etching processes due to microloading and RIE lag. We contribute a semi-empirical methodology for capturing and modeling pattern dependent effects in plasma etching of ICs. We apply this methodology to the study of interconnect trench etching, and show that an integrated model is able to predict both pattern density and feature size dependent non-uniformities in trench depth
Keywords :
integrated circuit interconnections; integrated circuit manufacture; isolation technology; pattern formation; sputter etching; ARDE; IC manufacturing; RIE lag; aspect ratio dependent etch; die level variation; feature level variation; integrated circuit manufacturing; interconnect trench etching; microloading; nonuniformities; pattern based prediction; pattern dependency; pattern formation; plasma etching; reactive ion etch; semiempirical methodology; Etching; Filters; Instruments; Micromechanical devices; Pattern formation; Plasma applications; Plasma density; Plasma materials processing; Predictive models; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
1-4244-0254-9
Type :
conf
DOI :
10.1109/ASMC.2006.1638727
Filename :
1638727
Link To Document :
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