Control of Contact Hole Distortion by Using Polymer Deposition Process (PDP) for sub-65nm Technology and Beyond

Author

Wang, Judy ; Sung, Shing-li ; Ma, Shawming

Author_Institution

Dielectric Etch Div., Appl. Mater., Sunnyvale, CA

fYear

2006

fDate

22-24 May 2006

Firstpage

83

Lastpage

87

Abstract

Contact hole distortion in dielectric etching was investigated and it is found that the contact hole distortion is mainly caused by low mask selectivity, poor mask surface control (roughness, striation, pitting or pin hole) before and after etching. The surface roughness and mask selectivity have been studied to overcome the problem of pattern deformation of photoresist (PR) and C-rich materials as the mask. By using the polymer deposition process (PDP), the mask degradation is improved and the contact profile is well controlled. This paper focuses on the discussion of PDP chemistry selection, PDP time decision, and PDP used at before or after BARC (bottom anti-reflective coating) open step

Keywords

coating techniques; distortion; integrated circuit technology; masks; nanotechnology; photoresists; surface roughness; surface treatment; 65 nm; BARC; C-rich materials; PDP chemistry selection; PDP time decision; PR; bottom anti-reflective coating; contact hole distortion control; dielectric etching; mask degradation; mask selectivity; mask surface control; nanotechnology; pattern deformation; photoresist; polymer deposition process; surface roughness; Chemistry; Dielectric materials; Etching; Gases; Polymers; Resists; Rough surfaces; Shape control; Surface roughness; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638728

Filename

1638728