Title :
Design optimization of GaN-based VCSELs
Author :
Piprek, J. ; Zhan-Ming Li
Author_Institution :
NUSOD Inst. LLC, Newark, DE, USA
Abstract :
We analyze recently manufactured designs of electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) using advanced laser simulation software. Thick quantum wells are found to allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., current crowding and electron leakage. Design optimization options are proposed and discussed.
Keywords :
III-V semiconductors; design; gallium compounds; optimisation; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; GaN; VCSEL; advanced laser simulation software; current crowding; design optimization; electron leakage; quantum wells; vertical cavity surface emitting lasers; Analytical models; Design optimization; Laser excitation; Optical design; Polarization; Pump lasers; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Virtual manufacturing;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297223
