DocumentCode :
2032471
Title :
Silicon-Polymer Electro-thermal bimorph actuators with SiC bottom-layer for large out-of-plane motion and improved power efficiency
Author :
Aarts, M. ; Wei, J. ; Sarro, P.M.
Author_Institution :
Dept. of Electron. Components, Tech. Univ. Delft, Delft, Netherlands
fYear :
2012
fDate :
5-8 March 2012
Firstpage :
253
Lastpage :
256
Abstract :
This paper presents the fabrication and characterization of a silicon-polymer electro-thermal out-of-plane bimorph actuator with SiC as bottom layer, for improved motion and better energy efficiency. The proposed concept improves on an earlier design using aluminum by making the bottom layer of SiC, a more robust material with a lower CTE. A process is developed to fabricate out-of-plane actuators with either Al or SiC as bottom layer. Both devices are characterized and their performances are compared. The new actuator with SiC as bottom layer shows a higher displacement (15.5μm) with less actuation voltage (4 V) and an average temperature increase on the actuator of 82°C.
Keywords :
aluminium; microactuators; polymers; silicon compounds; CTE; SiC; SiC bottom-layer; aluminum; energy efficiency; out-of-plane bimorph actuator; out-of-plane motion; power efficiency; silicon-polymer electro-thermal bimorph actuator; temperature 82 C; voltage 4 V; Artificial intelligence; Manganese; Silicon; Silicon carbide; formatting; style; styling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
Type :
conf
DOI :
10.1109/NEMS.2012.6196768
Filename :
6196768
Link To Document :
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