DocumentCode :
2032474
Title :
Modeling of Transistor Laser Optical Amplifiers under steady state and transient conditions
Author :
Basu, Rikmantra ; Barman, Abhirup Das ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
fYear :
2009
fDate :
14-17 Sept. 2009
Firstpage :
61
Lastpage :
62
Abstract :
We have explored the possibility of using transistor laser as an optical amplifier in addition to its normal function as an electronic amplifier. The steady state gain is calculated by assuming different InGaAs Quantum Well thickness within the GaAs base of fixed width thereby changing the capture rate and confinement factor. Clear gain saturation effect is exhibited. Using ODE solver, the gain saturation as a function of time is demonstrated. The linewidth enhancement factor of the amplifier is also evaluated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor optical amplifiers; semiconductor quantum wells; transistors; InGaAs-GaAs; ODE solver; capture rate; confinement factor; electronic amplifier; gain saturation effect; linewidth enhancement factor; quantum well thickness; steady state gain; transient condition; transistor laser optical amplifiers; Equations; Laser modes; Optical amplifiers; Optical devices; Optical mixing; Optical resonators; Optical saturation; Semiconductor optical amplifiers; Steady-state; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
Type :
conf
DOI :
10.1109/NUSOD.2009.5297224
Filename :
5297224
Link To Document :
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