DocumentCode :
2032588
Title :
Reliability prediction of 3C-SiC cantilever beams using dynamic Raman spectroscopy
Author :
Dewanto, Raden ; Chen, Tao ; Cheung, Rebecca ; Hu, Zhongxu ; Gallacher, Barry ; Hedley, John
Author_Institution :
Mech. & Syst. Eng., Newcastle Univ., Newcastle upon Tyne, UK
fYear :
2012
fDate :
5-8 March 2012
Firstpage :
270
Lastpage :
273
Abstract :
We propose an extension and improvement to reliability predictions in epitaxially grown 3C-SiC cantilever beam MEMS by utilizing dynamic Raman spectroscopy to allow the gathering of Weibull fracture test data to be done directly on devices thereby taking account of actual geometrical tolerances, dynamic load conditions and effects from the microfabrication process due to high lattice and thermal mismatch between 3C-SiC and Si. In this work, 3C-SiC devices were fabricated, modeled and actuated to determine both theoretical and experimentally measured strain levels within the device during operation. Initial results indicate both characteristic Raman peaks of 3C-SiC are suitable for this characterization and measurement resolution of 0.02 cm-1 is demonstrated. As the technique is performed directly on devices, it simplifies the frequently found time consuming methodology of preparations of micron-sized specimen fracture test pieces and gives a mechanism for feedback to optimize the fabrication process.
Keywords :
Raman spectra; beams (structures); cantilevers; epitaxial growth; fracture toughness testing; microfabrication; micromechanical devices; reliability; silicon compounds; C-SiC; Weibull fracture test data; cantilever beam MEMS; cantilever beams; dynamic Raman spectroscopy; dynamic load conditions; epitaxially grown; feedback; geometrical tolerances; lattice mismatch; measurement resolution; microfabrication process; micron-sized specimen fracture test pieces; reliability prediction; strain levels; thermal mismatch; Epitaxial growth; Micromechanical devices; Reliability; Silicon; Silicon carbide; Solid modeling; Three dimensional displays; MEMS; Raman spectroscopy; charatcerization; reliability; silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1122-9
Type :
conf
DOI :
10.1109/NEMS.2012.6196772
Filename :
6196772
Link To Document :
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