DocumentCode
2032785
Title
Thermo-mechanical simulations of an open tungsten TSV
Author
Singulani, A.P. ; Ceric, H. ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2012
fDate
5-7 Dec. 2012
Firstpage
107
Lastpage
111
Abstract
A specific open Through Silicon Via (TSV) technology is analyzed by means of thermo-mechanical Finite Element Method (FEM) simulations in order to assess stress behavior and to identify critical stress points in the structure. An analytical expression is introduced for the stress field around one TSV and its application in the description of the stress in a particular arrangement of vias is discussed. The analysis provides a consistent justification for the robustness of the technology, while it also points out the potential failure points.
Keywords
circuit simulation; finite element analysis; stress analysis; thermomechanical treatment; three-dimensional integrated circuits; tungsten; FEM; W; critical stress point identification; finite element method; open tungsten TSV technology; stress behavior analysis; thermomechanical simulation; through silicon via technology; Finite element analysis; Metals; Reliability; Silicon; Solid modeling; Stress; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
Conference_Location
Singapore
Print_ISBN
978-1-4673-4553-8
Electronic_ISBN
978-1-4673-4551-4
Type
conf
DOI
10.1109/EPTC.2012.6507061
Filename
6507061
Link To Document