• DocumentCode
    2032785
  • Title

    Thermo-mechanical simulations of an open tungsten TSV

  • Author

    Singulani, A.P. ; Ceric, H. ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2012
  • fDate
    5-7 Dec. 2012
  • Firstpage
    107
  • Lastpage
    111
  • Abstract
    A specific open Through Silicon Via (TSV) technology is analyzed by means of thermo-mechanical Finite Element Method (FEM) simulations in order to assess stress behavior and to identify critical stress points in the structure. An analytical expression is introduced for the stress field around one TSV and its application in the description of the stress in a particular arrangement of vias is discussed. The analysis provides a consistent justification for the robustness of the technology, while it also points out the potential failure points.
  • Keywords
    circuit simulation; finite element analysis; stress analysis; thermomechanical treatment; three-dimensional integrated circuits; tungsten; FEM; W; critical stress point identification; finite element method; open tungsten TSV technology; stress behavior analysis; thermomechanical simulation; through silicon via technology; Finite element analysis; Metals; Reliability; Silicon; Solid modeling; Stress; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-4553-8
  • Electronic_ISBN
    978-1-4673-4551-4
  • Type

    conf

  • DOI
    10.1109/EPTC.2012.6507061
  • Filename
    6507061