Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

Author

Yin, F. ; Hu, W.D. ; Zhang, B. ; Li, Z.F. ; Hu, X.N. ; Chen, X.S. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

14-17 Sept. 2009

Firstpage

35

Lastpage

36

Abstract

We report on 2D numerical simulations of laser beam induced current (LBIC) for HgCdTe photovoltaic detector. The effect of junction leakage current on the LBIC signal is investigated, and different leakage paths caused by different reasons in HgCdTe photodiode arrays are taken into account in the simulation. The simulation results are in good agreement with the experiment data. Simulation results suggest that the LBIC can be used to determine the existence of the junction leakage current and investigate the original of the junction leakage current.

Keywords

II-VI semiconductors; cadmium compounds; laser beam effects; leakage currents; mercury compounds; photodetectors; photodiodes; sensor arrays; wide band gap semiconductors; 2D numerical simulations; HgCdTe; LBIC signal; junction leakage current; laser beam induced current; leakage paths; photodiode arrays; photovoltaic detector; Infrared detectors; Laser beams; Leakage current; P-n junctions; Photodiodes; Photovoltaic systems; Poisson equations; Semiconductor laser arrays; Sensor arrays; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on

Conference_Location

Gwangju

Print_ISBN

978-1-4244-4180-8

Type

conf

DOI

10.1109/NUSOD.2009.5297241

Filename

5297241