Title :
Development of a single stage C-band pulsed power amplifier for radar transmitter
Author :
Giri, Santu Kr ; Mandal, Soumen
Author_Institution :
Central Mech. Eng. Res. Inst., Electron. & Instrum. Group, CSIR, Durgapur, India
Abstract :
This paper presents the design and development of a single stage solid state pulse power amplifier (SS-PPA) working at 7.23 GHz ± 100 MHz frequency by using hybrid technology. The amplifier is designed to achieve maximum power gain with medium output power by adopting simultaneous conjugate matching procedure. Commercial available packaged pseudomorphic high electron mobility transistor (pHEMT) FPD6836P70 (from RFMD) is used for designing the amplifier. A pulse aggregate card has been developed to provide pulse bias. Plated through hole (PTH) technique is used for good high frequency grounding. At room ambient temperature, the measured peak output power from the prototype amplifier is 18.31 dBm for 8 dBm input driving power, measuring 10.31 dB gain. We present a description of the design of the amplifier, its simulated and measured results and their comparison with desired specifications.
Keywords :
earthing; high electron mobility transistors; microwave power amplifiers; radar transmitters; C-band pulsed power amplifier; FPD6836P70; conjugate matching; frequency grounding; hybrid technology; maximum power gain; plated through hole; pseudomorphic high electron mobility transistor; radar transmitter; single stage solid state pulse power amplifier; Logic gates; PHEMTs; Power amplifiers; Power generation; Radio frequency; Solids; Switches; distributed matching networks (keywords); peak power; pulse power amplifier; pulse repetition frequency; pulsed RF; rise/fall time;
Conference_Titel :
Electronics Computer Technology (ICECT), 2011 3rd International Conference on
Conference_Location :
Kanyakumari
Print_ISBN :
978-1-4244-8678-6
Electronic_ISBN :
978-1-4244-8679-3
DOI :
10.1109/ICECTECH.2011.5941566
