Title :
The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes
Author :
Shishehi, Sara ; Asgari, Asghar ; Kheradmand, Reza
Author_Institution :
Res. Inst. for Appl. Phys., Univ. of Tabriz, Tabriz, Iran
Abstract :
Nitride semiconductors and their alloys recently have versatile applications as high-power and high-efficiency electro optical devices duo to their high thermal stability, direct transition and wide bang-gap. Nanostructure light emitting diodes of these materials have an emission spectrum from infrared to ultraviolet. In this paper, besides simulating a nanostructure nitride semiconductor LED, such as multi quantum well nitride LEDs, the effect of temperature on the recombination rate has been investigated.
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; dielectric polarisation; electron-hole recombination; gallium compounds; light emitting diodes; nanoelectronics; piezoelectricity; quantum well devices; wide band gap semiconductors; AlGaN-GaN; Poisson equation; Schrodinger equation; continuity equations; light emitting diodes; multi quantum well nitride LED; nanostructure nitride semiconductor LED; piezoelectric polarization; recombination rate; spontaneous polarization; Aluminum gallium nitride; Electrooptic devices; Gallium nitride; Light emitting diodes; Nanostructured materials; Optical materials; Radiative recombination; Semiconductor materials; Temperature; Thermal stability;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location :
Gwangju
Print_ISBN :
978-1-4244-4180-8
DOI :
10.1109/NUSOD.2009.5297243
