Performance evaluation of a Schottky SiC power diode in a boost PFC application

Author

Spiazzi, G. ; Buso, S. ; Citron, M. ; Corradin, M. ; Pierobon, R.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

Volume

2

fYear

2002

fDate

2002

Firstpage

631

Abstract

The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated. A 300 W boost power factor corrector with average current mode control (PFC) is considered as a key application. Measurements of overall efficiency, switch and diode losses and conducted electromagnetic interference (EMI) are performed both with the SiC diode and with two ultra-fast, soft-recovery, silicon power diodes, namely the RURD460 and the recently presented STTH5R06D. The paper compares the results to quantify the impact of the recovery current reduction provided by SiC diode on these key aspects of the converter behavior.

Keywords

AC-DC power convertors; Schottky diodes; power factor correction; power semiconductor diodes; rectifying circuits; semiconductor device measurement; semiconductor device testing; 300 W; 4 A; 600 V; EMI; Infineon SDP04S60; RURD460; STTH5RO6D; SiC; SiC Schottky diode; average current mode control; boost power factor corrector; conducted electromagnetic interference; diode losses; efficiency; power converter behavior; recovery current reduction; switch losses; Electromagnetic interference; Electromagnetic measurements; Loss measurement; Magnetic losses; Performance evaluation; Power measurement; Reactive power; Schottky diodes; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual

Print_ISBN

0-7803-7262-X

Type

conf

DOI

10.1109/PSEC.2002.1022524

Filename

1022524