Dielectric Engineering on Cell Capacitor for Advanced Trench DRAM

Author

Kao, Chien-Kang ; Chang, Chih-Ming ; Kuo, Chia-Ming ; Wang, Chun-Yao ; Ku, Alex

Author_Institution

FAB1ProMOS Tech. Inc., Hsinchu

fYear

2006

fDate

22-24 May 2006

Firstpage

251

Lastpage

254

Abstract

In this paper, we discuss the cell capacitor characteristics via wafer acceptance test (WAT) and reliability test for advanced trench capacitor. Combination of N₂O reoxidation and NH₃ nitridation processes can improve leakage current and maintain the same level of cell capacitance. This obvious improvement is contributed from extra nitrogen incorporation in reoxidation surface and more oxygen incorporation in nitride layer, which modify the film structure of storage dielectrics. Based on secondary ion mass spectrometer (SIMS) and Fourier transform infrared (FTIR) analysis, we propose the band model to clarify the influence of reoxidation and nitridation processes on cell trench capacitor

Keywords

DRAM chips; Fourier transform spectrometers; capacitors; integrated circuit reliability; integrated circuit testing; leakage currents; nitridation; nitrogen compounds; oxidation; DRAM; Fourier transform infrared analysis; N₂O; NH₃; cell capacitance; cell capacitor; cell trench capacitor; dielectric engineering; leakage current; nitridation process; nitride layer; reliability test; reoxidation process; secondary ion mass spectrometer; storage dielectrics; wafer acceptance test; Capacitance; Capacitors; Dielectrics; Leakage current; Maintenance; Mass spectroscopy; Nitrogen; Random access memory; Reliability engineering; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638763

Filename

1638763