Title :
Dielectric Engineering on Cell Capacitor for Advanced Trench DRAM
Author :
Kao, Chien-Kang ; Chang, Chih-Ming ; Kuo, Chia-Ming ; Wang, Chun-Yao ; Ku, Alex
Author_Institution :
FAB1ProMOS Tech. Inc., Hsinchu
Abstract :
In this paper, we discuss the cell capacitor characteristics via wafer acceptance test (WAT) and reliability test for advanced trench capacitor. Combination of N2O reoxidation and NH3 nitridation processes can improve leakage current and maintain the same level of cell capacitance. This obvious improvement is contributed from extra nitrogen incorporation in reoxidation surface and more oxygen incorporation in nitride layer, which modify the film structure of storage dielectrics. Based on secondary ion mass spectrometer (SIMS) and Fourier transform infrared (FTIR) analysis, we propose the band model to clarify the influence of reoxidation and nitridation processes on cell trench capacitor
Keywords :
DRAM chips; Fourier transform spectrometers; capacitors; integrated circuit reliability; integrated circuit testing; leakage currents; nitridation; nitrogen compounds; oxidation; DRAM; Fourier transform infrared analysis; N2O; NH3; cell capacitance; cell capacitor; cell trench capacitor; dielectric engineering; leakage current; nitridation process; nitride layer; reliability test; reoxidation process; secondary ion mass spectrometer; storage dielectrics; wafer acceptance test; Capacitance; Capacitors; Dielectrics; Leakage current; Maintenance; Mass spectroscopy; Nitrogen; Random access memory; Reliability engineering; Testing;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location :
Boston, MA
Print_ISBN :
1-4244-0254-9
DOI :
10.1109/ASMC.2006.1638763
