Title :
Post Implant Strip Optimization for 90nm and Beyond Technologies
Author :
Fuller, Nicholas C M ; Santiago, Anthony ; Mello, Kevin ; Yu, Chienfan ; Molis, Steve
Author_Institution :
IBM Res., Yorktown Heights, NY
Abstract :
Optical emission spectroscopy, SEM, and SIMS were used to analyze the modified layer formed during exposure of resist materials to ion implant conditions and to characterize the removal rate of this modified layer upon exposure to various plasma strip chemistries on commercial strip tools. This methodology was used to evaluate candidate strip chemistries for reducing post implant strip defectivity and increasing device functional yield
Keywords :
CMOS integrated circuits; circuit optimisation; integrated circuit manufacture; resists; scanning electron microscopy; secondary ion mass spectroscopy; 90 nm; SEM; SIMS; implant strip optimization; ion implant; optical emission spectroscopy; plasma strip chemistries; resist materials; Chemical technology; Implants; Optical materials; Particle beam optics; Plasma applications; Plasma chemistry; Resists; Spectroscopy; Stimulated emission; Strips;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE
Conference_Location :
Boston, MA
Print_ISBN :
1-4244-0254-9
DOI :
10.1109/ASMC.2006.1638770
