• DocumentCode
    2033814
  • Title

    A SWNTs thin film solar microcell prepared by simple solution-evaporation method

  • Author

    Chen, C.C. ; Chang, Y.Y. ; Zhang, J.

  • Author_Institution
    Nat. Key Lab. of Microl Nanometer Fabrication Technol., Peking Univ., Beijing, China
  • fYear
    2012
  • fDate
    5-8 March 2012
  • Firstpage
    519
  • Lastpage
    522
  • Abstract
    This paper reports a solar microcell based on single-walled carbon nanotubes (SWNTs) thin film-silicon heterojunction prepared by very simple and low cost solution-evaporation (SE) method. The nano-material of SWNTs, which has a one-dimensional structure and direct band gap with unique electric properties, is applied and plays the role of the energy conversion in the solar microcells, including exciton generation, carrier collection and transportation. The intrinsic p-SWNTs film was deposited conformally on the n-type silicon substrate to form the p-n heterojunction by SE method. Under 100mA/cm2 illumination, the SWNTs thin film microcell shows the open voltage (Voc) of 230mV, short circuit current density (Jsc) of 73.7μA/cm2, and fill factor (FF) of about 19%, proving that SE method is promising for achieving SWNTs thin film for application in microdevices.
  • Keywords
    carbon nanotubes; p-n heterojunctions; silicon; solar cells; thin films; SE method; SWNT thin film solar microcell; Si; carrier collection; carrier transportation; direct band gap; electric properties; energy conversion; exciton generation; fill factor; intrinsic p-SWNT film; low cost solution-evaporation method; microdevices; n-type silicon substrate; one-dimensional structure; p-n heterojunction; single-walled carbon nanotubes; Carbon nanotubes; Films; Gallium nitride; Microcell networks; Silicon; SWNTs thin film; heterojunction; solar microcell; soloution-evaporation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-1122-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2012.6196829
  • Filename
    6196829